? semiconductor components industries, llc, 2015 may, 2015 ? rev. 1 1 publication order number: NTP8G202N/d NTP8G202N power gan cascode transistor 600 v, 290 m features ? fast switching ? extremely low q rr ? transphorm inside ? these devices are pb-free, halogen free/bfr free and are rohs compliant absolute maximum ratings (t j = 25 c unless otherwise noted) parameter symbol ndd unit drain?to?source v oltage v dss 600 v gate?to?source v oltage v gs 18 v continuous drain current r jc steady state t c = 25 c i d 9.0 a t c = 100 c 6.0 power dissipation ? r jc steady state t c = 25 c p d 65 w pulsed drain current t p = 10 s i dm 35 a operating junction and storage temperature t j , t stg ?55 to +150 c lead temperature for soldering leads t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance parameter symbol value unit junction?to?case (drain) r jc 2.3 c/w junction?to?ambient steady state r ja 62 c/w www. onsemi.com v (br)dss r ds(on) typ 600 v 290 m @ 10 v device package shipping ordering information NTP8G202Ng t o?220 (pb?free) 50 units / rail to?220 case 221a?09 style 10 1 2 3 4 marking diagram & pin assignment a = assembly location y = year ww = work week g = pb?free package NTP8G202Ng ayww 1 gate 3 drain 4 source 2 source n?channel mosfet d (3) s (2,4) g (1)
NTP8G202N www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs =0v, i d =1ma 600 v drain?to?source leakage current i dss v ds = 600 v, v gs =0v t j =25 c 2.5 90 a t j = 150 c 8.0 gate?to?source leakage current i gss v gs = 18 v 100 na on characteristics (note 1) gate threshold voltage v gs(th) v ds =v gs , i d = 500 a 1.6 2.1 2.6 v static drain-to-source on resistance r ds(on) v gs =8v, i d = 5.5 a 290 350 m dynamic characteristics input capacitance c iss v ds = 400 v, v gs = 0 v, f = 1 mhz 760 pf output capacitance c oss 26 reverse transfer capacitance c rss 3.5 effective output capacitance, energy related (note 3) c o(er) v gs = 0 v, v ds = 0 to 480 v 36 effective output capacitance, time related (note 4) c o(tr) i d = constant, v gs = 0 v, v ds = 0 to 480 v 57 total gate charge q g v ds = 100 v, i d = 5.5 a, v gs = 4.5 v 6.2 9.3 nc gate-to-source charge q gs 2.1 gate-to-drain charge q gd 2.2 switching characteristics (note 2) turn-on delay time t d(on) v dd = 480 v, i d = 5.5 a, v gs =10v, r g = 2 6.2 ns rise time t r 4.5 turn-off delay time t d(off) 9.7 fall time t f 5.0 source?drain diode characteristics diode forward voltage v sd i s = 5.5 a, v gs =0v t j =25 c 2.1 v reverse recovery time t rr v gs =0v, v dd = 480 v i s = 5.5 a, d i /d t = 1500 a/ s 12 ns reverse recovery charge q rr 29 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures. 3. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss 4. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss
NTP8G202N www. onsemi.com 3 typical characteristics figure 1. typical output characteristics figure 2. typical output characteristics v ds (v) 6 4 2 0 0 10 15 20 25 35 figure 3. typical transfer characteristics figure 4. normalized on?resistance v gs (v) t j ( c) 10 8 6 4 0 10 20 125 200 100 50 25 0 0.0 1.5 2.5 3.0 figure 5. typical capacitance figure 6. typical c oss stored eneergy v ds (v) 1 10 i ds (a) i ds (a) normalized r ds(on) c (pf) 3 v vgs = 8 v t j = 25 c i d = 12 a, v gs = 10 v 40 810 35 0 15 25 40 2.0 100 1000 75 150 t j = 25 c 4 v 5 v v ds (v) 6 4 2 0 0 5 10 15 20 i ds (a) 3 v vgs = 8 v 810 t j = 175 c 4 v 3.5 v 1 v v ds = 10 v t j = 175 c 2 0.5 1.0 175 v gs = 0 v f = 1 mhz c iss c oss c rss v ds (v) 500 400 200 100 0 0 3 5 6 e oss ( j) 4 300 600 1 2 500 400 200 100 0 300 600 30 5 3.5 v 1 v 30 5
NTP8G202N www. onsemi.com 4 typical characteristics figure 7. forward characteristics of rev. diode v sd (v) 6 4 2 0 0 5 10 15 20 25 i s (a) i s = f(v sd ) 30 8 1 t j = 175 c 75 c 150 c 35 357 125 c 100 c 50 c 25 c figure 8. safe operating area v sd (v) 100 10 1 0.1 0.1 1 id s (a) 100 0 t c = 25 c 10 5 ms dc 1 ms 100 s 10 s figure 9. safe operating area v sd (v) 100 10 1 0.1 0.1 1 id s (a) 1000 t c = 80 c 10 5 ms dc 1 ms 100 s 10 s figure 10. transient thermal resistance v sd (v) 1 0.1 0.001 0.00001 0 1.0 z th ( c/w) 10 single pulse 0.5 0.01 0.0001 1.5 2.0 2.5 d = 10% d = 20% d = 50%
NTP8G202N www. onsemi.com 5 figure 11. switching time test circuit figure 12. switching time waveform v ds v gs 90% 10% t off t f t d(off) t r t d(on) t on figure 13. test circuit for reverse diode characteristics figure 14. diode recovery waveform q f q s i, v i f di f /dt i rrm v rrm 90% i rrm 10% i rrm di rr /dt t t f t s t rr t rr = t s + t f q rr = q s + q sic diode
NTP8G202N www. onsemi.com 6 package dimensions to?220 case 221a?09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 10: pin 1. gate 2. source 3. drain 4. source on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTP8G202N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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